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RRAM (Resistive Random Access Memory)

Ashvinikumar

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Hi,

I have been trying to plot the DC characteristics for RRAM. I am getting the Transient characteristics correctly but when i do the DC sweep analysis it produces faulty results.
even in the benchmark circuits provided by the RRAM model developers even in the DCC sweep analysis they apply pulse at the input and use .tran command.

Following is the netlist for the pulse opertion :
Pulse Operation
.OPTION POST
.OPTION RUNLVL=4
.hdl rram_v_1_0_0.va
X1 in 0 rram_v_1_0_0 gap_ini = 19e-10 model_switch = 1 deltaGap0 = 0.05
*Pulse SET
Vin in 0 pulse 0 1.8 10ps 10ps 10ps 100ns 200ns
.tran 1ps 205ns START=-1ns
.end

Following is the netlist for the DC Sweep operation:

.OPTION POST
.OPTION RUNLVL=4
.hdl rram_v_1_0_0.va
S initial: set (dynamic)
X1 in 0 rram_v_1_0_0 gap_ini = 19e-10 model_switch = 1 deltaGap0 = 5e-5
Vin in 0 pulse 0 2 1us 4ms 4ms 1us 10ms
.tran 1us 8.1ms START=1us
.end

The only difference on both the netlist is that the rise and fall time and pulse width is kept too low for pulse operation and it is quite large in DC sweep operation.

ANy help in this regard will be of great help,thank you in advance.
 

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