Rainbee
Newbie level 2
Most textbooks describe MOSFET I-V characteristic equation with channel length modulation effect as
Id(sat)=K(W/L)(Vgs-Vth)²(1+λVds).
But because the effect of pinch-off(or channel length modulation) begins when Vds>Vsat(Vgs-Vth), I think that it should be
Id(sat)=K(W/L)(Vgs-Vth)²[1+λ(Vds-Vsat)].
And when it comes to continuity between Id(triode) and Id(sat), I think later one is better.
Am I wrong? I'm confused.
Thank you
p.s. Sorry, I'm not good at English.
Id(sat)=K(W/L)(Vgs-Vth)²(1+λVds).
But because the effect of pinch-off(or channel length modulation) begins when Vds>Vsat(Vgs-Vth), I think that it should be
Id(sat)=K(W/L)(Vgs-Vth)²[1+λ(Vds-Vsat)].
And when it comes to continuity between Id(triode) and Id(sat), I think later one is better.
Am I wrong? I'm confused.
Thank you
p.s. Sorry, I'm not good at English.