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RFIC design IS device physics. You may not be the actual process engineer tweaking the doping levels in the fab line, but you had better know all about how active and passive devices are fabricated, and their parasitics, if you want to design RF circuits on-chip.
i think yes
RFIC designer must know well the RF model of the the modern MOS devices , lik substarte network , NQS resistance of the gate , gate inductance and so on so it is better to know device physics to estimate all these components and use them in frist design phases
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