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Hi Erikl,
yes, you are right, it is not used usually, but used by mistake (somethimes for ESD consideration.)
it is very nice to have discussion with you guys on the board.
Regards,
Jeff
Hi Erikl,
maybe I need to clarify the answer agian. :-D
see the doc i posted, and i think the Fig 4.4 is right for the cap of Fig4.3 (poly/nwell cap). for the part when vpoly is low and vnwell is high, the capacitance for the poly/nwell cap depends on frequency on it.
I did the sim for this...
Hi Erikl,
I think the bifurcation between us is whether the poly-over-nwell-cap is close to cox or not when Vpoly is low while Vnwell is high.
my answer is yes. but, it depends on the operation frequency on the cap.
for very low frequency, at which holes can be geneated fast enough, the high...
thanks Erikl,
yes, the hole i reffered is the free charge when Vpoly - Vnwell is <0 .
to be honesty, we did simulation to the two situations, one is Vpoly-Vnwell >0, the other Vpoly-Vnwell <0, the result is close to your statement.
but, we just doubt the nwell-cap not-accurate modeling...
Re: inversion MOSFET against enhancement MOSFET
Hi Erikl,
yes, the serial connection of two caps will reduce the overall capacitance for small |Vpoly|, but with more negative Vpoly, the overall cap is still close to cox,because any small disturbance on Vpoly results in the change of "hole"...
hi Erik,
thanks for your reply.
but, for poly over nwell cap,i think it is very close to MIS (metal-isolator-semiconduction) cap, and many references said that there is still a same capacitance (~cox) when Vpoly is enough lower than the voltage on nwell (low frequency).
here "enough" means, the...
Re: low frequency VCO
hi
i think you can use divider to increase the freq. resolution, and the freq step can be realized by adding or removing capacitors.
good luck.
jeff
hi
yes, you are right. as i know, like SCR structure, it will actrually induce latch up.
so when design such structure, you must be careful. in normal mode, the latch up caused by esd protection ckt will not happen, but when esd test or a large electro-static charge inject, the latch up is used...
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