svizoman
Junior Member level 3
For FETs they say P=I^2*Rds(on) and for BJTs they say P=voltage drop * I
For FETs Rds(on) is let's say 100mA and with current of 10A FET will generate 10W. TO220 housing has round 60C/W so with no heat sink it will quickly pass max operating temperature.
For BJT voltage drop should be 0.7V so at 10A is will generate 7W of heat (we neglect Ib that is some 100 times smaller). So still to hot for T0220 witn no heat sink.
Is this correct or not?
For FETs Rds(on) is let's say 100mA and with current of 10A FET will generate 10W. TO220 housing has round 60C/W so with no heat sink it will quickly pass max operating temperature.
For BJT voltage drop should be 0.7V so at 10A is will generate 7W of heat (we neglect Ib that is some 100 times smaller). So still to hot for T0220 witn no heat sink.
Is this correct or not?