electronics_kumar
Advanced Member level 2
This may sound like a small question for someone....
In BJT base area was kept small to achieve less transit time..may somemore pluspoints also..but in Phototeansistor base area is large...why it so?
(is there any tradeoff between transit time and factor 'X' in phototransistor.What 'X'?
In BJT base area was kept small to achieve less transit time..may somemore pluspoints also..but in Phototeansistor base area is large...why it so?
(is there any tradeoff between transit time and factor 'X' in phototransistor.What 'X'?