I know, in general, BVDS means drain to source breakdown voltage and I wanted to know how substrate breakdown voltage is represented. While I was in search of that I came across BVDSS, which I don't know about.
That would be something like BVdb_ but this is often not
specified separately (especially if the foundry knows that
lateral punchthrough or hot carrier reliability degradation
happens well below D-B breakdown, which would be a
normal device-design-to expectation (why would you let
the isolation junction be the weak link in process construction?).