AMSA84
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Hi guys,
I have a doubt here.
I will start to play around with this technology and for start I am analyzing the technology components available and right now I am looking to the MOSFETs transistors available from this technology and which ones are available in the kit that I am using. I would like ask for help on the interpretation of the MOSFETs that I have access to in the kit. Please, correct me if I am wrong. I need to know this in order to look the model docs.
The available transistors in the kit are (I'll neglect the RF transistors):
N_12_HSL130E: NMOS, 1.2V, High-Speed, L=130nm, E=?
N_12_HSL130E_IG: NMOS, 1.2V, High-Speed, L=130nm, E=?, IG=?
N_BPW_12_HSL130E: NMOS, Triple-Well, 1.2V, High-Speed, L=130nm, E=?
N_BPW_12_HSL130E_IG: NMOS, Triple-Well, 1.2V, High-Speed, L=130nm, E=?, IG=?
N_LVBPW_12_HSL130E: NMOS, Low-VT, Triple-Well, 1.2V, High-Speed, L=130nm, E=?
N_LV_12_HSL130E: NMOS, Low-VT, 1.2V, High-Speed, L=130nm, E=?
N_NVT_12_HSL130E: NMOS, Native VT, 1.2V, High-Speed, L=130nm, E=?
N_HGBPW_33_L130E: NMOS, High-Gain, Triple-Well, 3.3V, L=130nm, E=?
N_HGLVBPW_33_L130E: NMOS, High-Gain, Low-VT, Triple-Well, 3.3V, L=130nm, E=?
N_HGLV_33_L130E: NMOS, High-Gain, Low-VT, 3.3V, L=130nm, E=?
N_HGNVT_33_L130E: NMOS, High-Gain, Native VT, 3.3V, L=130nm, E=?
N_HG_33_L130E: NMOS, High-Gain, 3.3V, L=130nm, E=?
For what the E and IG stands for?
EDIT: By the way, why they have a transistor with NATIVE VT? What's the different to the others?
Kind regards.
I have a doubt here.
I will start to play around with this technology and for start I am analyzing the technology components available and right now I am looking to the MOSFETs transistors available from this technology and which ones are available in the kit that I am using. I would like ask for help on the interpretation of the MOSFETs that I have access to in the kit. Please, correct me if I am wrong. I need to know this in order to look the model docs.
The available transistors in the kit are (I'll neglect the RF transistors):
N_12_HSL130E: NMOS, 1.2V, High-Speed, L=130nm, E=?
N_12_HSL130E_IG: NMOS, 1.2V, High-Speed, L=130nm, E=?, IG=?
N_BPW_12_HSL130E: NMOS, Triple-Well, 1.2V, High-Speed, L=130nm, E=?
N_BPW_12_HSL130E_IG: NMOS, Triple-Well, 1.2V, High-Speed, L=130nm, E=?, IG=?
N_LVBPW_12_HSL130E: NMOS, Low-VT, Triple-Well, 1.2V, High-Speed, L=130nm, E=?
N_LV_12_HSL130E: NMOS, Low-VT, 1.2V, High-Speed, L=130nm, E=?
N_NVT_12_HSL130E: NMOS, Native VT, 1.2V, High-Speed, L=130nm, E=?
N_HGBPW_33_L130E: NMOS, High-Gain, Triple-Well, 3.3V, L=130nm, E=?
N_HGLVBPW_33_L130E: NMOS, High-Gain, Low-VT, Triple-Well, 3.3V, L=130nm, E=?
N_HGLV_33_L130E: NMOS, High-Gain, Low-VT, 3.3V, L=130nm, E=?
N_HGNVT_33_L130E: NMOS, High-Gain, Native VT, 3.3V, L=130nm, E=?
N_HG_33_L130E: NMOS, High-Gain, 3.3V, L=130nm, E=?
For what the E and IG stands for?
EDIT: By the way, why they have a transistor with NATIVE VT? What's the different to the others?
Kind regards.
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