UMC 130nm Process doubt

Hi guys,

I have a doubt here.

I will start to play around with this technology and for start I am analyzing the technology components available and right now I am looking to the MOSFETs transistors available from this technology and which ones are available in the kit that I am using. I would like ask for help on the interpretation of the MOSFETs that I have access to in the kit. Please, correct me if I am wrong. I need to know this in order to look the model docs.

The available transistors in the kit are (I'll neglect the RF transistors):

N_12_HSL130E: NMOS, 1.2V, High-Speed, L=130nm, E=?
N_12_HSL130E_IG: NMOS, 1.2V, High-Speed, L=130nm, E=?, IG=?
N_BPW_12_HSL130E: NMOS, Triple-Well, 1.2V, High-Speed, L=130nm, E=?
N_BPW_12_HSL130E_IG: NMOS, Triple-Well, 1.2V, High-Speed, L=130nm, E=?, IG=?
N_LVBPW_12_HSL130E: NMOS, Low-VT, Triple-Well, 1.2V, High-Speed, L=130nm, E=?
N_LV_12_HSL130E: NMOS, Low-VT, 1.2V, High-Speed, L=130nm, E=?
N_NVT_12_HSL130E: NMOS, Native VT, 1.2V, High-Speed, L=130nm, E=?

N_HGBPW_33_L130E: NMOS, High-Gain, Triple-Well, 3.3V, L=130nm, E=?
N_HGLVBPW_33_L130E: NMOS, High-Gain, Low-VT, Triple-Well, 3.3V, L=130nm, E=?
N_HGLV_33_L130E: NMOS, High-Gain, Low-VT, 3.3V, L=130nm, E=?
N_HGNVT_33_L130E: NMOS, High-Gain, Native VT, 3.3V, L=130nm, E=?
N_HG_33_L130E: NMOS, High-Gain, 3.3V, L=130nm, E=?

For what the E and IG stands for?

EDIT: By the way, why they have a transistor with NATIVE VT? What's the different to the others?

Kind regards.

AMSA84 said:

... why they have a transistor with NATIVE VT? What's the different to the others?

Click to expand...

A NATIVE VT transistor has zero or very low VT. Properly suited for transistor stacks.

as I know , native nmos vt very low
0.5um normal VT=0.7 native nmos maybe 0.3v
for 0.25um 0.18um maybe vt =0v
for some mixer or amplifier need 0 VT

but native mos is large area ..and someone siad have more noise couple ..

Thank you all guys. I became more clarified.