Yong Wang
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Dear all,
I am currently simulating a CPW tline with GSG pads. The schematic is shown below. The substrate is p-Si with 1Ohm.cm resistivity. The SiO2 is 3um thick, and on top of that is 300nm Au as the conductor.
The simulated Z0 of the pads (w/ taper) is 45 Ohm, while that of the tline itself is 65 Ohm. And Z0 of the whole structure (pad, taper, tline) is 45 Ohm, no matter how long the tline is. Intuitively speaking, if the tline is much longer than the pad/taper, then the pad/taper would have no effect on the Z0 of the line, is it? Even if I made the tline with very funny structure, the overall Z0 is still 45 Ohm...
Please help me out.
Thanks!
I am currently simulating a CPW tline with GSG pads. The schematic is shown below. The substrate is p-Si with 1Ohm.cm resistivity. The SiO2 is 3um thick, and on top of that is 300nm Au as the conductor.
The simulated Z0 of the pads (w/ taper) is 45 Ohm, while that of the tline itself is 65 Ohm. And Z0 of the whole structure (pad, taper, tline) is 45 Ohm, no matter how long the tline is. Intuitively speaking, if the tline is much longer than the pad/taper, then the pad/taper would have no effect on the Z0 of the line, is it? Even if I made the tline with very funny structure, the overall Z0 is still 45 Ohm...
Please help me out.
Thanks!