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SiC Fet & Gate Driver ?

ge

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I'm an RF type, not power....
Can the Infineon 2ED300C17 Gate Driver designed (for IGBTs) be used with the IMBF170R1K0M1 SIC MOSFET?
I am looking to use the SiC MOSFETS in half bridge configuration to switch between -1200v and +20v.

I'm running Infineon tutorials to come up to speed.

thanks
 

FvM

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The driver isn't suited for SiC FET because the negative output voltage exceeds maximum ratings. Also the switching speed would degrade SiC performance.
--- Updated ---

What's the required isolation type and working voltage?
 
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    Thanks FvM

ge

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Thanks FvM.
Life would be much easier if I can find a Half Bridge driver for this FeT. I really don't want to roll my own, but may halve to.
I'm dreaming of using two SiC fets in half-bridge configuration to switch between roughly -1200V and +20V. DC Current will be very low.
Switching speed, especially rise/fall time will be important.
I liked this device because I can drive it with 0v & +12v.
 

ge

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I hear you mtwieg.
I keep looking at Wolfspeed too. I use their RF devices.
The money must be in driving diode modules.
 

ge

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I do not understand question, "Isolation Requirements".
I am wanting the MOSFETs to switch between -1200V and +20V.

Reviewing gate-driver.com now. They also seem slow. Will continue to look at their site.
I'm also looking at the UCC21530. https://www.ti.com/product/UCC21530
 
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FvM

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You have 1200 V working voltage for the power circuit. But what's the isolation between control and power circuit?
 

ge

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>> But what's the isolation between control and power circuit?
I thought that would be any number significantly larger than the 1200V?
 

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