It's a typo error there, a vice versa situation… :grin:
1. The BJT is a current-controlled device since its output is determined on the input current, while FET is considered as a voltage-controlled device, because it depends on the field effect of the applied voltage.
2. The BJT (Bipolar Junction Transistor) uses both the minority and majority carriers (holes and electrons), while FETs, which are sometimes called unipolar transistors, uses either holes or electrons for conduction.
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Read more:
Bipolar Junction Transistors and Field Effect Transistors
**broken link removed**
Typical transistor ratings:
Power dissipation: maximum allowable power dissipation on a sustained basis.
Reverse voltages: maximum allowable VCE , VCB , VEB .
Collector current: the maximum allowable collector current.
Saturation voltage =VCE voltage drop in a saturated transistor.
Beta: β=IC/IB
Bias design can be simplified using transistor characteristic curves. The characteristic curves predict the performance of a BJT. There are an input characteristic curve, a transfer characteristic curve and an output characteristic curve. The most useful for amplifier design is the output characteristics curve, a graph displaying the output voltages and currents for different input currents. The linear part of the curve needs is utilized for an amplifier or oscillator. For use as a switch, a transistors biased at the extremities of the graph, these conditions are known as "cut-off" and "saturation".