Re: some measures needed ...
Hi,
1) Here is a sample Hspice model card( i found this handy), i mean the MOS model parameters provided by foundry. I hope u find it!! . Also please check your foundry documentation
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.MODEL nch3 NMOS ( LMIN = '0.18E-06-dxl3'
+NLEV = 3 AF = 0.9065 KF = 3.564E-24
+LMAX = 2.1E-05 WMIN = '1.00E-06-dxw3' WMAX = 0.000101
+LEVEL = 49 TNOM = 25 VERSION = 3.1
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2) write a spice netlist or draw a schematic for single nmos or pmos, with voltage biasing in such a way tht your MOS will be in strong inversion/saturation(vgs=vth + >70mv), do operating point analysis in any spice tool. Refer the documentation for that tool to find way to dump these values(gamma,Phi @ strong inversion)
you can also surf...there are literature explaining this in detail.(hint for searching.."MOSFET parameter extraction using spice for hand calculation)
3) NQS --> non quasi static effect, to be simple, its the delay in gate voltage change to corresponding channel charge.
Hope i am specific. Please let me know if i am not.. let me try again.
Thanks,