kushal nandanwar
Full Member level 3
I am looking for logic level MOSFET which can on fully at 5V. With continues current of 3 to 5A
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Search Logic Level MOSFET
Vgs has many options with thresholds that have reduced from 4V to 2.5 to <1 V
Specify RdsON Vds and logic level.
The parameter combination makes no sense. 1 mohm refers to a huge die with rather several 100 than a few A rating.
1 mohm + 50 V + logic level sounds unlikely.
I don't see how the statement should be related to your previous question and my answer. You have been asking for a MOSFET with a particular combination of parameters.I think this can handle 4A without heat sink, with 4.5V gate voltage
I don't see how the statement should be related to your previous question and my answer. You have been asking for a MOSFET with a particular combination of parameters.
Or did you give up your initial specification?
The design usually starts with defining acceptable power dissipation in on-state and respective Rds,on. I would choose a transistor with 15 to 30 mohm, something like Si4850.
You'll notice that the largest choice of logic level FETs is offered in SO8 package.
Not at all. Your posts suggest up to now that you're looking for a transistor operated as switch. Power dissipation in on-state is I²*Rds,on.Means, if my mosfet operate at 30V with 4A it will dissipate 120W power, 120j/sec, so I have to look for a mosfet with can handle 120W at 50C
Not at all. Your posts suggest up to now that you're looking for a transistor operated as switch. Power dissipation in on-state is I²*Rds,on.
Not at all. Your posts suggest up to now that you're looking for a transistor operated as switch. Power dissipation in on-state is I²*Rds,on.
Depends on how you are operating the transistor. If you drive it into linear operation by applying a low gate voltage, it can generate high power dissipation. For dynamic power dissipation during slow switching edges, there's a safe operation area in the datasheet. Switching up to µs rise and fall time shouldn't be a problem if the repetition frequency is slow.But what if I connect 30V across drain and source , will this calculation remain same?
Depends on how you are operating the transistor. If you drive it into linear operation by applying a low gate voltage, it can generate high power dissipation. For dynamic power dissipation during slow switching edges, there's a safe operation area in the datasheet. Switching up to µs rise and fall time shouldn't be a problem if the repetition frequency is slow.
So it's pure switching operation and transistor power dissipation should be low in all cases.
Don't understand why you previously claimed high power dissipation.