Bytheway, Gray stated that MOS enter the weak inversion if VDS(sat) is below 80 mV, which is quite different from the values given up
So my question, how the other books using the square low equations and they are not in the strong inversion, are they just approximating the solution as the 100 mV is at the border of strong inversion?
only concern in the book image I showed it looks like not in the strong inversion, hence square low equations is not very accurate to apply,
Regarding your comment, I believe that it is good to keep in mind that this image shown an approximation for a given technology/process (in this case, 0.18um I think). Since IC is defined according to the technology current, this 225mV of VeffVeff V_{eff} is not a constant value, but a technology dependent parameter.
You can find some examples of variation according to technology in Tables 3.1 and 3.2 of Binkley's book.
I reanalysed my assumptions and, taking a second look, the only technology parameter that really plays a role in VeffVeff V_{eff} for strong inversion is the substract factor. Find below my analysis.
n represent the substrate factor or the of the subthreshold slop factor ? how can I find this value of my used technology
Normally it is a value between 1.2 and 1.5.
The typical value is between 1<n<3
s affordable by process information or need to be extracted?
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