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SF/FS are not a montecarlo simulations but corners
on the one case the nmos are slow an pmos are fast (all transistors on the simulated scheme)
on the other case in revers the nmos transistors are fast and pmos are slow
on the case of monte carlo mismatch simulation the different parameters changing randomly and not so critically like on the case of cornerst simulation
f.e. on the case of SF mismatch simulation
the nmos will slow, pmos will fast, and every nmos/pmos will have other small differences related to the technolokgy mismatch
SF / FS are few MOSFET corners to check the behavior of the circuit when NMOS and PMOS have different strengths, like for SF - Slow NMOS, Fast PMOS; FS - Fast NMOS, Slow PMOS.
Monte Carlo simulation gives the effect of mismatch between two identical transistors (like input pair of differential opamp or current mirror transistors), due to variations in their "W" and "Vth" occurring during fabrication process. Here you have to select the transistors for which you wish to see the mismatch effect.