Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Isolation barrier in the digital signal isolator.

Status
Not open for further replies.

imrankhanPNU

Member level 1
Joined
Feb 21, 2018
Messages
34
Helped
0
Reputation
0
Reaction score
0
Trophy points
6
Activity points
461

This is in large part, opinion. Likely biased by what the
opinion-holder has on the table. Just because somebody
puts text in a patent application does not mean it's true
or comprehensively so.

There are examples of both. I've seen bond wire inductor /
xfmr / "stripline" coupling, I've built capacitive coupled
half-bridge GaN driver (worked fine), I've seen papers with
integrated coupled inductors.

Seems like they make an argument related to "receiver"
node impedance. But the "barrier formed from inductors"
seems to miss the point, that an inductive coupler is trying
to be a transformer (or Marchand (tline) xfmr, which sort
of combines capacitive and inductive in the lousy tline
formed by close spaced bond wires). The transformer
qualities will affect how well the low-Z node can be driven.
But a low value C coupling isn't goping to move a low-Z
node a whole lot, for long, either.

To me it looks like a Marketing weasel wanted to get in
on the patent pile-on, and contributed a talking point.
 
Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top