Hi,
How do we find µn * Cox for nmos transistor by hand calculation and by operating point analysis in Cadence(Print DC operating points)?
With Diode connected mosfet and drain connected to a current source, I get µn * Cox = 223u
With gate and drain connected to a voltage source, I get µn * Cox = 85u.
Please let me know which procedure is correct or is there any other procedure to get µn * Cox.
... where εSiO2 = 34.5 fF/(µm)2 and tox = toxe (s. line 6 of your model file) . For the above equation, use the toxe value (given in units of [m]) in [nm], i.e. for your 50nm process Cox = 34.5/1.4 ≈ 25 fF/(µm)2.
For the transconductance factor k = µn * Cox calculation, for µn use the low field mobilityu0 values from your model file (s. lines 19 resp. 78 of your model file, different values for nmos & pmos), given in [m2/V*s] units.
From operating point analysis use the Ids value and calculate the transconductance factor k = µn * Cox from the equation given here.