the FET operate as a resistor when it works in deep triode region with the condition Vds<<2(Vgs - Vth),but the range of the condition is very large.
when simulation, use Ron=Vds/Id, we can get a curve of Ron. but Ron is not a
constant value, how can i get a typical value?
I think you have to check the measurement condition of the datasheet specified or check other comparable device specification/measurement conditions to do your measurement.
I think you have to check the measurement condition of the datasheet specified or check other comparable device specification/measurement conditions to do your measurement.
hi,paulux
Thanks for replied.
The datesheet have not specified the measurement/specification conditions.
I want to choose the minimum value but it maybe has some problems.
i think the typical Ron is measured in the typical condition the MOS used, e.g vgs=5,vds is very small and the MOS can be regarded to work in deep linear region, then calculate the Ron just using Vgs and the other device parameter such as W/L , Kp etc.
generally, for powermos Ron, Vds=0.1V / 0.2V; Vgs is usually given by the process. Say, for a 5V Vgs process, use Vgs=5V; for a 25v Vgs process, use Vgs=25v.
According to my experience
Simulate a resistor and power mos between vdd and gnd. Power mos need be post file from layout. Estimate Ron from data of foundry, and adding resistor of metal and via.