Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Register Log in

ESD structure in bipolar process

Status
Not open for further replies.
Z

zhonghan

Junior Member level 3
Joined
Jan 8, 2007
Messages
26
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,463
What is the difference on the effect against ESD between reverse biased base-epi junction and base-emitter short connected npn transistor ? One is diode , one is npn transistor. I guess the base emitter short connected npn is somewhat like ggnMOS. who can give an explicit distinguishing between the two structures?
 

In BiCMOS technologie, the bipolar is recommended because of the area efficiency.
While in some other technologies, using the diode is more simple and more efficiency.
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top