Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Effects of poly doping on mos varactor

Status
Not open for further replies.

ustc_tweeg

Newbie level 6
Joined
Oct 14, 2006
Messages
14
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,369
hi, I meet with a problem about mosvar and need some help.
I make two mosvar and test them at 2GHz with bias voltage sweeping from -1.8v to 1.8v.

mosvar1: n+ poly; n+ source/drain in n-well
mosvar2: p+ poly; n+ source/drain in n-well

As for the mosvar1 the c-v curve soon reaches a maximum value at about 1v, and then holds on for higher bias voltage. While the mosvar2 keeps rising upon positive bias, and no sign of slowing down.

I wonder why the poly doping makes so big a difference?
 

mosvaractor question

The gate material makes a big difference. Check out Muller & Kamins. There are issues like surface states, pinned Fermi level, etc...
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top