jianke
Member level 3
BJT Common-Collector (CC) and Common-Base (CB) at RF Frequency ?
With the help of the low-frequency h-parameter model, we know that a Common-Collector (CC) amplification circuit amplify current (i.e. voltage gain is about “1”), and a Common-Base (CB) amplification circuit amplify voltage (i.e. current gain is about “1”).
At RF frequency (e.g. 2GHz), RF small-signal model has to be used for the junction capacitance and feedback effect of the BJT transistor. I want to know at this frequency, whether the CC or CB amplification circuit has the same function, just like at low frequency. For example, at 2GHz frequency, a CC amplifier amplify current (voltage gain is about “1”), and a CB amplifier amplify voltage (current gain is about “1”).
I checked several references but can't find the analysis of CC or CB amplification circuit at RF frequency. Doesn't anyone have an idea or any references? Thanks
With the help of the low-frequency h-parameter model, we know that a Common-Collector (CC) amplification circuit amplify current (i.e. voltage gain is about “1”), and a Common-Base (CB) amplification circuit amplify voltage (i.e. current gain is about “1”).
At RF frequency (e.g. 2GHz), RF small-signal model has to be used for the junction capacitance and feedback effect of the BJT transistor. I want to know at this frequency, whether the CC or CB amplification circuit has the same function, just like at low frequency. For example, at 2GHz frequency, a CC amplifier amplify current (voltage gain is about “1”), and a CB amplifier amplify voltage (current gain is about “1”).
I checked several references but can't find the analysis of CC or CB amplification circuit at RF frequency. Doesn't anyone have an idea or any references? Thanks