I'm to calculate the (static or dynamic) capacitance of a silicon wire shown in the Figure below. When a bias is applied to the metal electrodes, a current passes through the silicon wire. And by using Suprem, I can calculate the 3-D charge density inside the silicon wire, say rho(r) where r is the 3-D position vector.
Now, I want to calculate the capacitance of the wire as a function of rho(r). Could you please give an idea?
Next, you must calculate the potential density distribution against an isolated and may be idealized substrate. And then the tensor/matrix division ...
Sorry, carbon9,
I've never worked with the Supreme tool. My answer was just of theoretical nature:
If you can calculate the 3D-matrices of charge density distribution & potential distribution (e.g. potential against an ideal substrate environment), then it should be possible to divide these 3D-matrices by each other and get C=Q/V by summing up this ratio over the whole of your line/wire.