samiurrehman
Member level 2
Dear all,
A number of papers with BiCMOS circuitry would use emitter length as the primary specification, like in one paper it says "0.180um*5um" with a specific npn hbt...what i conclude from this specification is that this hbt (high freq bjt) shall be built with 180nm technology with an emitter length of 5um, is this conclusion right?
On other places the specification is written as follows: e.g 9*0.17um^2 this is an area...is this emitter area???
The technology file i have from a certain company does not allow me to change these parameters but i change the collector current.....i know changing above parameters mean changing the collector(or emitter) current but is there any way to relate the changing emitter length with the changing emitter current???
A number of papers with BiCMOS circuitry would use emitter length as the primary specification, like in one paper it says "0.180um*5um" with a specific npn hbt...what i conclude from this specification is that this hbt (high freq bjt) shall be built with 180nm technology with an emitter length of 5um, is this conclusion right?
On other places the specification is written as follows: e.g 9*0.17um^2 this is an area...is this emitter area???
The technology file i have from a certain company does not allow me to change these parameters but i change the collector current.....i know changing above parameters mean changing the collector(or emitter) current but is there any way to relate the changing emitter length with the changing emitter current???