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A.Anand Srinivasan said:the parasitic diode of MOSFET or the body diode is the due to the PN junction formed between the source and the gate.... this usually causes latchup when left open and is connected to the lowest supply to avoid latchup but due to its reverse capacitance and diode nature it causes trouble... so generally body and source are shorted to minimise its effect...
dineshbabumm said:I think u wrongly mentioned Gate instead of Body(Or bulk)..
Parasitic diode occurs because the substrate is P substrate(in Nmos) and the source and drain r n+regions.. So both the bulk and source(and drain) regions forms a diode.. When it is forward biased,it becomes an alternate path for current to flow and most of the currents may pass to the bulk instead of through the channel.. When reverse biased,it wil develop capacitance due to the inherent nature of the diode..
forkschgrad said:what is the best way to minimize this parasitic? tnx.