Junus2012
Advanced Member level 5
Dear friends,
it is know that shorter channel transistor is faster than with longer gate. This I can understand well when we talk about NOSFET working as a switch.
But how this concept affect the speed of the operational amplifier where GBW = gm / CL for example. If you tell me that shorter channel leads to higher gm I can say that gm can be increased by increasing W or the biasing current, secondly the formula shows that only the input differential transistors affect the GBW, other transistors in the op-amp are not exsisting in the GBW last equation.
Thank you in advance
it is know that shorter channel transistor is faster than with longer gate. This I can understand well when we talk about NOSFET working as a switch.
But how this concept affect the speed of the operational amplifier where GBW = gm / CL for example. If you tell me that shorter channel leads to higher gm I can say that gm can be increased by increasing W or the biasing current, secondly the formula shows that only the input differential transistors affect the GBW, other transistors in the op-amp are not exsisting in the GBW last equation.
Thank you in advance