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hello,
I am creating a 4x4 6T sram array and i want to know that
1) what will be the idle writing and reading time for which the word line should high for 6T sram?
2)whenever i turn on the wordline after precharge the bitline and bitline bar gets discharged frequently why?
I want to know that if i will create a 6T sram array of 2x2 then if i want to calculate the power dissipation then how can i do this? i know how to calculate the power dissipation for the cell. but i want to know that how to calculate power dissipation for the array means for the architecture...
Thanks for your reply. we are working in hspice
1) How can we calculate bit line length?
2)what do you mean with input capacitance per bit cell. If according to you input capacitance per bit cell = wiring cap. + source drain capacitance + contact. Then how can we calculate wiring capacitance as...
Hello,
I am simulating a 16x16 sram array(6T) at 45nm technology but i am confused about the value of capacitances of bit line and bit line bar.please help
i want to know how the read and write column circuitry connected in sram cell.
and which circuitry are included in read and write column circuitry?
thanks
sir i want to know how the decoder circuitry and sense amplifier (different parts) are connceted with a 6T sram cell.
i want internal structure of every parts rather than block diagram.
I want to create a complete 6T sram architecture with all its peripherals (row decoder,column decoder,sense amplifier etc.). using hspice . i want to know the schematic of 6T sram with its peripherals.
its very obvious typing mistake sorry for that, I test nmos in hspice and i found that
drain voltage is inversly proportional to capacitance and gate voltage is directly proportional to capacitance?
Is the analysis correct or not?
Now can you give me the answer?
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