Follow along with the video below to see how to install our site as a web app on your home screen.
Note: This feature may not be available in some browsers.
You could stack 15 FETs with L=20µ serially, all bulks connected, all gates connected. Because of differences in the bulk control it's not identical to a single FET, but at least you can simulate it.I have binning based mos model, the max. L & W is around 20u and 100u. my calculations results in device with size w/l as 6u/300u, up to my understanding, the models will be accurate only in the binning rage, how to handle this??