CZa
Newbie level 4
Hello everyone,
I'm trying to design a VCO in the 50 - 70 GHz range using the IBM 0.13um cmrf8sf and I've got several questions:
- The transition frequency for the transistors in this process is about 90 GHz. Do you think they will present enough gain at the band of interest?
- Although I'm more used to single transistor topologies, I've seen that most CMOS VCOs are implemented using a cross coupled topology. Why is this topology advantageous with regard to the single transistor topology?
- For the capacitance ranges of the varactors available in this process, about 4 - 16 pF, I would need a very low inductance value, around 1 pH, which is too low for spiral implementations. I've tried to use a shorted stub instead, but apparently the stubs in the process cannot be shorter than 100um, which shields a minimum inductance of about 75 pH. What can I do about it?
I will be very grateful if you could answer any of these questions or provide any advice.
Thank you very much in advance,
CZa
I'm trying to design a VCO in the 50 - 70 GHz range using the IBM 0.13um cmrf8sf and I've got several questions:
- The transition frequency for the transistors in this process is about 90 GHz. Do you think they will present enough gain at the band of interest?
- Although I'm more used to single transistor topologies, I've seen that most CMOS VCOs are implemented using a cross coupled topology. Why is this topology advantageous with regard to the single transistor topology?
- For the capacitance ranges of the varactors available in this process, about 4 - 16 pF, I would need a very low inductance value, around 1 pH, which is too low for spiral implementations. I've tried to use a shorted stub instead, but apparently the stubs in the process cannot be shorter than 100um, which shields a minimum inductance of about 75 pH. What can I do about it?
I will be very grateful if you could answer any of these questions or provide any advice.
Thank you very much in advance,
CZa