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it`s depends of the transistor. however you can not forget that in the real device there are minor carriers that can lead this courrents. In the specific case of a MOS transistors it passes for the common bulk
Leakage current arrises from recombination process in the depletion regions of junctions. In the case of a diode it is the depletion region around the PN junction. In the case of a BJT it is the BC or BE junction. For a MOSFET, it is the Drain-Body Junction for long channel transistors. Short channel transistors could have a tunneling component to the leakage current.
leakage current is like leakage of water through a small hole in the pipe which is a flow that is not needed. Amount of water leaked may be negligible compared to total useful flow.....Unless the leakage is prevented, it may damage the pipe in the future......
In transistor or a p-n junction, leakage current is generated by the minority carriers that move under the effect of applied reverse bias field....can also be generated by thermal agitation, which again is enhanced by the reverse field ...the regenerative process finally leads to the permanent damage of the junction.....
Leakeage Current is increasing due to aggressive scaling of MOS device .Due to scaling we have effects like Narrow channel and short channel,gate tunneling ,reverse bias diode leakage ,subthreshold conduction of MOS
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