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electron and hole mobility on mechanical stress

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raj_007

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Hi,

shallow trench isolation (STI) that cause the LOD effect, it increase the pmos driving strength and lower the nmos driving strength.

Please can anyone share the link related to above statement I am not getting cleared idea how it exactly.

Thanks
 

I know this STI stress generated effect as WPE, see e.g. this posting, especially the linked paper named WPE_LOD_Paper.pdf, sect. III. STI Stress, Fig. 17 on page 6 .
 
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