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I am trying to simulate a CPW on a high-resistivity silicon (5000 ohm.cm) substrate. I am wondering what will be the correct value for loss tangent of this substrate. Can anyone tell me if there is any reference to look for?
hfss cpw port
you can define a rectangular box to include the cross section of CPW structure and substrate first, then use boolean operation to substrate 2 smaller rectangles to get a polygen having contact with the ground layer.
I am confused with the results showing in the attached smith chart.
I understant MP here is the magnitude and phase of the impedance.
Then what is the relationship between MP, RJ, and GB, Q, and VSWR here?
How is conversion between S, Z, and Y parameters in the HFSS reports?
Thanks for any reply.
I want to use HFSS to simulate a complex structure by dividing it into several parts to tune them seperately. Then I can combine the parts into one through wave transfer matrix means.
Please tell me if it is doable in HFSS? And how to do it?
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