Hi, Karesz.
Although both MOSFET & IGBT have gate breakdown voltage 20V, some 30V, there are differences.
In order to turn MOSFET on, you apply about 10V to the gate, any more will have little benefit - the turn-on curve is "flat" above about 10V, you'd be just worsening the loses in gate drive.
On the other hand, IGBTs are often driven to 15V at the gate, their turn-on requirements are a little different.
To turn a MOSFET off, you simply drop the gate voltage to source potential, relative 0V.
IGBTs may be more tricky to turn off, sometimes you need to pull it about 5V below source, for a reliable turn-off (at least in some applications; inductive loads may require this; i'm not sure
.
In the end you'll need to be able to charge/discharge about 150-200% gate energy and possibly dual voltage to drive IGBT compared to MOSFET. Not to mention that driving a device with 15V at the gate is dangerously close to it's breakdown limit.
Review some datasheets of both MOSFETs and IGBTs and look up the "Transfer characteristics" graph, you'll see the difference.
The power limitation of MOSFETs, besides breakdown limits, is inherent to the fact that their conduction losses are resistive - more volts, more heat. IGBTs are more like a diode, they have a defined forward voltage which is dependant only on the current being passed. This difference allows IGBTs to operate where MOSFETs would be too lossy, at high voltages.
JS