velocity saturation effect
Hot Carrier Effects. Reading: Chapter 9. EE231 – Vivek Subramanian. Slide 4-2. Why do we care about hot electron effects? ...
organics.eecs.berkeley.edu/~viveks/ee231/lectures/section4p4.pdf
________________________HOT-CARRIER RELIABILITY SIMULATION IN AGGRESSIVELY SCALED MOS
TRANSISTORS
By
Manish P. Pagey
Dissertation
Submitted to the Faculty of the
Graduate School of Vanderbilt University
in partial fulfillment of the requirements
for the degree of
DOCTOR OF PHILOSOPHY
in
Electrical Engineering
December , 2003
Nashville, Tennessee
Approved:
Ronald D. Schrimpf, Chair
Kenneth F. Galloway, Chair
Robert A. Weller
Sokrates T. Pantelides
Lloyd W. Massengill
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Thin Gate Oxide Device PMOS HCI Reliability and NBTI
Effect Correlation-
Fudan-zhouke.doc -
- in google seach/
_______________
Turk J Elec Engin, VOL.14, NO.3 2006, c T¨UB˙ITAK
Statistical Model of Hot-Carrier Degradation and
Lifetime Prediction for P-MOS Transistors
Fırat KAC¸AR1, Ayten KUNTMAN1, Hakan KUNTMAN2
1Electrical and Electronics Engineering Department, Engineering Faculty,
˙Istanbul University, 34320, Avcılar, ˙Istanbul-TURKEY
2Electronics and Communication Engineering Department, Faculty of Electrical and
Electronics Engineering, ˙Istanbul Technical University,
34469, Maslak, ˙Istanbul-TURKEY
e-mail:
fkacar@istanbul.edu.tr -akun
tman@istanbul.edu.tr -kun
tman@ehb.itu.edu.tr
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Mat. Res. Soc. Symp. Proc. Vol. 811 © 2004 Materials Research Society
Electrical modeling and simulation of nanoscale MOS devices with a
high-permittivity dielectric gate stack
J.L. Autran1, D. Munteanu, M. Houssa2, M. Bescond, X. Garros3, C. Leroux3
Laboratoire Matériaux et Microélectronique de Provence – L2MP (UMR CNRS 6137), Bâtiment
IRPHE, BP 146, 49 rue Joliot Curie, F-13384 Marseille Cedex 13, France
1 also with Institut Universitaire de France (IUF) – Corresponding author (autran@l2mp.fr)
2 IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
3 CEA-LETI, 17 avenue des Martyrs, BP 85X, F-30854 Grenoble Cedex 1
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CSSER 99_Schroder.ppt
_______________________
velocity saturation - S. M. Sze. Physics of Semiconductor Devices Second Edition A Willey-Interscience Publication Jon Wiley &Sons N. Y. ... 1981/
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EE 316 / Prof. Saraswat Handout 5
MOS TRANSISTOR REVIEW
file - MOSFET_Handout5.pdf
__________________________
+! velocity saturation temperature dependence.
_____________________________________http://www.lib.umd.edu/drum/bitstream/1903/6788/1/umi-umd-4274.pdf
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velocity saturation **broken link removed**
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