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Carrier velocity v = µE (µ:mobility ; E:electric field strength) in silicon saturates at about 10^7 cm/s. This leads to an Id-vs-Vgs less than quadratic dependency, i.e. more linear behavior, meaning lower Id current, by this lower saturation voltage, but also lower transconductance.dipak.rf said:What is velocity saturation effect? How it is related to IC layouts?
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