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Since CMOS circuit rapidly Charges and Discharges load simultaneously, there will be flow of current due to parasitic inductance of the bonding pad and package,So lead wire connecting to the chip to one of the power supplies Vdd or Vss drop in voltage. This voltage drop with respect to ground Vss is termed as Ground bounce. Ground bounce is also due to internal circuits.
Ground Bounce in internal circuitry is different from ground bounce due to I/O buffers.
Causes
1) Many transistors switching at same time 2) use of single clock phase 3) higher operating frequency 4) Short rise time and fall time
Reduction of Ground bounce
1) Adding decoupling capacitance.
2) Separate ground buses for internal circuits and internal circuits
3) Utilizing Substrate conduction
4) Reducing Rise time and fall time
5) Widening of ground interconnect buses.
6) To control rise time and fall time
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