In general multiple MOS devices are made on a common substrate. As a result, the substrate voltage of all devices is normally equal. However while connecting the devices serially this may result in an increase in source-to-substrate voltage as we proceed vertically along the series chain (Vsb1=0, Vsb2 0).Which results Vth2>Vth1.
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If the backgate or body is biased independently of source then the threshold voltage will vary. For NMOS, if source is biased greater than backgate voltage then threshold voltage increases, for PMOS if source is biased lesser than backgate voltage than Vth decreases(becomes more negative).
This is called backgate or body effect.
In general multiple MOS devices are made on a common substrate. As a result, the substrate voltage of all devices is normally equal. However while connecting the devices serially this may result in an increase in source-to-substrate voltage as we proceed vertically along the series chain (Vsb1=0, Vsb2 0).Which results Vth2>Vth1.
U can more information through google search also.
can you please tell how the threshold voltage is increased due to Body effect and what is the effct of depletion region due to body effect in threshold voltage