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below 0.13um or even at 0.13um, leakage power is a significant thing to consider as it is not just about power but also about timing, thermal, noise..etc.
now a days it is better to first synthesize design using HIGH Vt library and replace the timing critical paths with LOW Vt cells to meet timings. This ensures a better power design with required speed.
One interesting thing is, the dynamic power consumption (running time) maybe no difference between low/high VT. The reason is High VT is slower and has longer transition time which uses more power.