Aug 19, 2010 #1 M mona123 Member level 5 Joined Jun 10, 2010 Messages 87 Helped 3 Reputation 6 Reaction score 3 Trophy points 1,288 Activity points 1,898 I have option on SiGeBiCMOS process to use pnp BJT or pFET device as active load. which one should I use and why? thanks.
I have option on SiGeBiCMOS process to use pnp BJT or pFET device as active load. which one should I use and why? thanks.
Aug 19, 2010 #2 A ammarzouk Newbie level 5 Joined Feb 11, 2010 Messages 9 Helped 2 Reputation 4 Reaction score 1 Trophy points 1,283 Location Germany Activity points 1,330 It depends on what you want. Usually BJTs suffer higher current loss, but can accomodate higher currents than FETs
It depends on what you want. Usually BJTs suffer higher current loss, but can accomodate higher currents than FETs
Aug 19, 2010 #3 M mona123 Member level 5 Joined Jun 10, 2010 Messages 87 Helped 3 Reputation 6 Reaction score 3 Trophy points 1,288 Activity points 1,898 can you please expalin a little more elaborately? thanks. why BJT have more current loss? what is current loss ?
can you please expalin a little more elaborately? thanks. why BJT have more current loss? what is current loss ?
Aug 22, 2010 #4 E eladla Member level 4 Joined Jul 10, 2009 Messages 78 Helped 15 Reputation 32 Reaction score 12 Trophy points 1,288 Activity points 1,817 MOSFETs have near-zero gate to source leakage, where as BJTs do have a significant base current. On the other hand, if you wish to draw large currents, BJTs are much more effective. It all depends on what you need to achieve.
MOSFETs have near-zero gate to source leakage, where as BJTs do have a significant base current. On the other hand, if you wish to draw large currents, BJTs are much more effective. It all depends on what you need to achieve.
Aug 22, 2010 #5 M mona123 Member level 5 Joined Jun 10, 2010 Messages 87 Helped 3 Reputation 6 Reaction score 3 Trophy points 1,288 Activity points 1,898 why is pnp more effective than pmos in drawing large current?