URGENT HELP: SiGe HBT Design

[saad]

Hello mates,
I need to design a SiGe HBT for the following specifications
1. Base transit time = 0.2ps
2. Base sheet resistance = 10KOhms /sq
3. fT(at Vcb=1.5V)>140 GHz
4. Beta>=200
5. BVceo > 3V

There are few restirctions on
1. Maximum n and p-type dopings = 5*10^19 /cm3,
2. Maximum doping on the low doped side of a pn junction =5*10^8 /cm3 (to avoide tunnelling leakage)
3. Maximum Ge content = 12%
4. For single crystal emitter We=20nm (or for poly emitter assume emitter depth in single crystal Si is 20 nm)

Please if anyone can help me on,
1. Helping material, Books, recommended readings, notes etc
2. any guidelines on how to start the problem
3. anything else you want to mention.

Many thanks,
I will be looking forward for replies.

Saad

 

[satish.1979]

What you want to design using SiGe HBT?

 

[saad]

I need to design the Hetrojunction Bipolar Transistor that meets these specs and constraints.

 

[saad]

anyone to help?? plz its urgent