To keep any trnaistor in triode region, Vds must be smaller than the saturation voltage defined as Vdssat=2/(n*gm/Id), where n is the inverse of the subthreshold slope.
For a given Id, as W/L increrases, gm/Id does it too and then Vdssat decreases. In the limit (very deep) of subthreshold conduction, Vdssat saturates to about 3-4Vt, where Vt is kT/q.
you can use the triode region of the MOS as controllable conductance. Works great for transconductance stages with ground refered input voltage. If L get longer the linearity improves. For most techs 4*Lmin works.
you can use the triode region of the MOS as controllable conductance. Works great for transconductance stages with ground refered input voltage. If L get longer the linearity improves. For most techs 4*Lmin works.
you can use the triode region of the MOS as controllable conductance. Works great for transconductance stages with ground refered input voltage. If L get longer the linearity improves. For most techs 4*Lmin works.