After some thinking, I've done some more simulations to better understand what exactly is going on. I wanted to be sure that strange behave is done by adding an inverter.
1st simulation: TG without inverter, but with R=1MOhms at OUT. Results:
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EN and ~EN signals are stimuli pulse signals. When ~EN is equal to 1 both transistors are in cutoff region, but there is some charge - probably capacity I think. We can see that creating path to gnd trough resistor is good way to discharge this accumulated energy.
2nd simulation: TG with inverter, without R. Results:
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EN is stimuli pulse, ~EN is from inverter. When ~EN is equal to 1 both transistors are in cutoff region, but without R the charge accumulated in parasitic capacity have no way to go.
3rd simulation: TG with inverter, but with R=1MOhms at OUT. Results:
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EN is stimuli pulse, ~EN is from inverter. When ~EN is equal to 1 both transistors are in cutoff region. The result is very similar to 1st simulation.
After all, the inverter isn't so bad
Even without R, current isn't passing through TG, so TG isn't draining current when EN=0 and thats what I wanted to achieve.
Thanks everybody for discussion and help. I hope screenshoots will help other people to better understand TGs.