JohnLai
Junior Member level 3

Dear Folks,
I observed that for a pair of complementary transmission-gates (PMOS//NMOS), the DC ON-resistance increases as temperature rises. It seems contradicting that the threshold voltage of transistors (Vth) becomes smaller as temperature rises such that the overdrive across each of the transistors becomes larger. The larger overdrive should result in larger conducting currents, which is smaller ON-resistance.
Can someone explain why TG DC ON-resistance has positive temperature coefficient?
Thanks.
I observed that for a pair of complementary transmission-gates (PMOS//NMOS), the DC ON-resistance increases as temperature rises. It seems contradicting that the threshold voltage of transistors (Vth) becomes smaller as temperature rises such that the overdrive across each of the transistors becomes larger. The larger overdrive should result in larger conducting currents, which is smaller ON-resistance.
Can someone explain why TG DC ON-resistance has positive temperature coefficient?
Thanks.