mukundh225
Newbie level 6
Hi all,
I am using a 2N2219A bipolar NPN transistor for my project.
I want the transistor to work in saturation region so that the drop across Vce=Vce(sat)=.3V.
but i need Ic not to increase more than 70mA.
i tried 2things :
1. made Ib=7mA, so that the transistor is in saturation which worked but Ic got more than 100mA.
2. made Ib=.7mA as hfe=100 but the transistor was not in saturation mode so the drop across Vce was more than 0.3V.
Can anyone please suggest me how to design the transistor biasing so that I have Ic=70mA and also Vce=Vce(sat).
I have also attached the datasheet of 2N2219A.
View attachment 2N2219A_datasheet-7.pdf
Thanks
Mukund
I am using a 2N2219A bipolar NPN transistor for my project.
I want the transistor to work in saturation region so that the drop across Vce=Vce(sat)=.3V.
but i need Ic not to increase more than 70mA.
i tried 2things :
1. made Ib=7mA, so that the transistor is in saturation which worked but Ic got more than 100mA.
2. made Ib=.7mA as hfe=100 but the transistor was not in saturation mode so the drop across Vce was more than 0.3V.
Can anyone please suggest me how to design the transistor biasing so that I have Ic=70mA and also Vce=Vce(sat).
I have also attached the datasheet of 2N2219A.
View attachment 2N2219A_datasheet-7.pdf
Thanks
Mukund