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The connection between channel depletion layer and SCE

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sharas

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"The device with the thinner oxide has a smaller channel depletion layer and hence improved short channel charecteristic"

(Intel Technology Journal Q3'98/MOS Scaling: Transistor Challenges for the 21st Century, P.3 in the attached file)

Can anyone please explain this to me? How does the channel depletion layer size influence the SCE?
 

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