Aug 17, 2007 #1 0 020170 Full Member level 4 Joined Jan 31, 2005 Messages 231 Helped 3 Reputation 6 Reaction score 1 Trophy points 1,298 Activity points 2,221 Following Table shows that SRAM power dissipation in writing and Reading operation. ( It's from "A Low Power SRAM USing Hierarchical Bit Line And Local Sense Amplifiers, IEEE, 2005" ) The SRAM consumed 28mW at Write operation. Question : What is "Write operation" refered in this paper? Is it that Power dissipation needed to write only One Cell? or Total Power dissipation "on Writing operation" ? thanks
Following Table shows that SRAM power dissipation in writing and Reading operation. ( It's from "A Low Power SRAM USing Hierarchical Bit Line And Local Sense Amplifiers, IEEE, 2005" ) The SRAM consumed 28mW at Write operation. Question : What is "Write operation" refered in this paper? Is it that Power dissipation needed to write only One Cell? or Total Power dissipation "on Writing operation" ? thanks
Aug 17, 2007 #2 A analog_prodigy Full Member level 2 Joined Jul 19, 2007 Messages 140 Helped 14 Reputation 28 Reaction score 2 Trophy points 1,298 Location India Activity points 1,936 I think, it's the power dissipation for writing operation at once.
Aug 17, 2007 #3 A A.Anand Srinivasan Advanced Member level 5 Joined Oct 15, 2005 Messages 1,792 Helped 257 Reputation 514 Reaction score 39 Trophy points 1,328 Location India Activity points 10,678 i think it is for a writing a particular number of cells or writing the whole array of cells at once.... because the only the power dissipation would be this high for CMOS technology....
i think it is for a writing a particular number of cells or writing the whole array of cells at once.... because the only the power dissipation would be this high for CMOS technology....
Aug 20, 2007 #4 0 020170 Full Member level 4 Joined Jan 31, 2005 Messages 231 Helped 3 Reputation 6 Reaction score 1 Trophy points 1,298 Activity points 2,221 Dynamic Power Dissipation Or Static Power Dissipation? In my thought, Dynamic Dissipation is ture.
Aug 20, 2007 #5 A A.Anand Srinivasan Advanced Member level 5 Joined Oct 15, 2005 Messages 1,792 Helped 257 Reputation 514 Reaction score 39 Trophy points 1,328 Location India Activity points 10,678 i think it is dynamic for writing operation and static for read operation....
Aug 21, 2007 #6 0 020170 Full Member level 4 Joined Jan 31, 2005 Messages 231 Helped 3 Reputation 6 Reaction score 1 Trophy points 1,298 Activity points 2,221 A.Anand Srinivasan said: i think it is dynamic for writing operation and static for read operation.... Click to expand... I don't Understand why consumed static power dissipation in reading operation. is it right that consume dynamic power dissipation in reading operation, too ? thanks
A.Anand Srinivasan said: i think it is dynamic for writing operation and static for read operation.... Click to expand... I don't Understand why consumed static power dissipation in reading operation. is it right that consume dynamic power dissipation in reading operation, too ? thanks
Aug 21, 2007 #7 A A.Anand Srinivasan Advanced Member level 5 Joined Oct 15, 2005 Messages 1,792 Helped 257 Reputation 514 Reaction score 39 Trophy points 1,328 Location India Activity points 10,678 while reading the MOS doesnt change state... dynamic power is when a memory element switches... for writing they would have calculated worst case and hence i assume they would have switched....
while reading the MOS doesnt change state... dynamic power is when a memory element switches... for writing they would have calculated worst case and hence i assume they would have switched....