Re: Spin on Doping
Thank you for your reply.
As far as I know spin on doping technique is till date the best known method for high doped semiconductor. The chance of sample damaging is quite low.
According to the data sheet, we should expect solid solibility in silicon to be around 1e20 at 950°c
Traditionally, two steps are followed in spin on doping technique: predeposition and drive in.
So, do you say in this process I can achieve more than 1e17 impurity atoms in the sample?