Simulation of device mismatch effect on circuit performance

[GDF]

I have several questions about the simulation with mismatched device as
following.

1. From tsmc, we get three papameters to describe the mismatch of transistor,
which are σVt,σIdsat,σβ. Do we need to use all of them to describe the
mismatch in the same time? or, use them seperately?

2. Which one of them is most often used? For straight forward thinking, the σVt
is easy to be used, is it right?

3. Why we need Idsat and β in MOS device which is often used for BJT? What's
the meaning of these two parameters in MOS?

Anybody got the idea? Thanks,

 

[srivatsan]

Re: Simulation of device mismatch effect on circuit performa

1. The best way to do simulation to "see" some relationship between the parameters. Try them individually, and check whether your assumptions are good. If not, re-work on that. There is no way you can get it if you dont try it.

2. Thats a good place to start...

3. IDSAT may affect your bias current or iQ, which may or may not impact circuit performance..

Srivats