sw0ws1
Junior Member level 1

hi
i use 0.18UM180FDKMFC-FDK
in my design i have to avoid body effect so i need to connect the bulk terminal of NMOS to its source
but the problem is the process is twin well
so can i use RF mos in the kit?it has 4 terminals (s,D,G ,B) , when i see RF transistor layout it has a layer called DNW ,does it mean "deep n well"??? and if so can i connect the bulk to source now??
the following figure appears when i make the layer DNW is the only visible in the layout of transistor

thanks in advance
i use 0.18UM180FDKMFC-FDK
in my design i have to avoid body effect so i need to connect the bulk terminal of NMOS to its source
but the problem is the process is twin well
so can i use RF mos in the kit?it has 4 terminals (s,D,G ,B) , when i see RF transistor layout it has a layer called DNW ,does it mean "deep n well"??? and if so can i connect the bulk to source now??
the following figure appears when i make the layer DNW is the only visible in the layout of transistor

thanks in advance
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