Advanced Member level 3
Can we make separate ground plane under RF device? For example make rectangular area in ground plane separated from it by 0.2mm gap. This new ground plane connects to main ground plane in one or many points with resistors. It can be one resistor R Ohm or many resistors n*R Ohm, so final resistance would be n*R/n=R Ohm. If this rectangular ground plane is connected to common source FET, will it provide biasing (voltage drop across resistors in operating mode), so Vgs will become negative?